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Explicit control laws for the periodic motion planning of controllable driftl...
International audience -
Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs
International audience -
Characterization of carbon nanotube field effect transistors using an active ...
International audience -
Uncorrelated Power Supply Noise and Ground Bounce Consideration for Test Patt...
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Temperature Dependence of Terahertz Radiation Detection by Field Effect Trans...
We have measured the Terahertz photoresponse of three types of FETs as a function of the temperature, to study the change of the dominant current mechanism. For all of... -
Terahertz detection using Si-SiGe MODFETs
We report on resonant and non-resonant (broad-band) detection of terahertz (THz) radiation using Strained-Si MODFETs. The devices were excited at room temperature by... -
Terahertz Imaging Using Strained-Si MODFETs as Sensors
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Improved Three-Way Split Formulas for Binary Polynomial and Toeplitz Matrix V...
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700-960MHz MIMO antenna for picocell applications
International audience -
Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT
Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are... -
Transport properties and functional devices on CVD grown Silicon nanowires
My thesis is devoted to the study of transport properties of Silicon Nanowires obtained by a bottom-up approach. The choice for the material system has been limited to... -
Muller C-element based Decoder (MCD): A decoder against transient faults
International audience -
Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology
A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The...
