Temperature Dependence of Terahertz Radiation Detection by Field Effect Transistors

We have measured the Terahertz photoresponse of three types of FETs as a function of the temperature, to study the change of the dominant current mechanism. For all of them we have compared the photoresponse with its DC transfer characteristics, which is directly proportional to the conductivity.

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Field	Value
Source	International Conference on Infrared Millimeter and Terahertz Waves
Author	Klimenko, Oleg, Teppe, Frederic, Knap, Wojciech, Iniguez, B., Coquillat, Dominique, Mityagin, Y. A., Dyakonova, N. V., Videlier, Hadley, Lime, F., Marczewski, J., Kucharski, K.
Maintainer	CCSD
Last Updated	May 11, 2026, 08:40 (UTC)
Created	May 11, 2026, 08:40 (UTC)
Identifier	hal-00816972
Language	en
contributor	Laboratoire Charles Coulomb (L2C) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
coverage	Wollongong, NSW, Australia
creator	Klimenko, Oleg
date	2012-09-23T00:00:00
harvest_object_id	25a88ed4-cc69-4cf2-80e4-fe39407b1eaf
harvest_source_id	3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title	test moissonnage SELUNE
metadata_modified	2025-08-13T00:00:00
relation	info:eu-repo/semantics/altIdentifier/doi/10.1109/IRMMW-THz.2012.6380333
set_spec	type:COMM