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Line Width roughness,photoresist 193 nm,CD-AFM,CD-SEM,plasma etching,metrology
With the constant decrease of dimensions in microelectronic devices, new problemes are raised. One of them is the variation of the transistor gate length, also called... -
Nano-patterned silicon surfaces for the self-organised growth of metallic nan...
The aim of this work is to obtain a very regular alignment of metallic nanostructures with high density and a narrow size distribution via a self-organised growth... -
Development and fabrication of vertical thin film transistors based on low te...
This work deals with the development of vertical thin film transistors (VTFTs) via the fabrication processes and the analysis of the electrical characteristics. The... -
Pattern density multiplication by direct self assembly of block copolymers: T...
Conference on Alternative Lithographic Technologies IV Location: San Jose, CA Date: FEB 13-16, 2012 Sponsor(s): SPIE -
Pulsed Plasmas for Etch Applications
The continuous downscaling in microelectronics imposes increasing demands on the plasma processes and traditional ways for process optimization reach their limits. New... -
SiGe derivatization by spontaneous reduction of aryl diazonium salts
International audience -
P-type and N-type multi-gate polycrystalline silicon vertical thin film trans...
International audience -
Plasma Etching of Poly(dimethylsiloxane): Roughness Formation, Mechanism, Con...
International audience
