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Etude et modélisation des phénomènes physiques émergents pour la simulation d...
The microelectronics industry is extremely competitive in the increase of performances for devices or circuits. Nanowire architectures are now considered for the... -
Scaling Beyond Moore: Single Electron Transistor and Single Atom Transistor I...
Continuous scaling of MOSFET dimensions has led us to the era of nanoelectronics. Multigate FET (MuGFET) architecture with 'nanowire channel'is being considered as one... -
Polarization and Frequency studies of Si MOSFET Terahertz Detectors
Test chips with Si MOSFETs integrating bow tie antennas are investigated to check the polarization and frequency dependence of THz sensitivity. The azimuthal angle... -
Terahertz Imaging Using Strained-Si MODFETs as Sensors
International audience -
Numerical study of electro-thermal effects in silicon devices
The ultra-short gate (LG < 20 nm) CMOS components (Complementary Metal-Oxide-Semiconductor) face thermal limitations due to significant local heating induced by... -
(Innovative sharp switching devices : from TFET to Z2-FET
This thesis is dedicated to studying sharp switching devices, including the tunneling field-effect-transistor(TFET) and a new feedback device we have named the Z2-FET,... -
Approche polymorphe de la modélisation électrothermique pour la fiabilisation...
The strong current development of embedded electronic systems leads us to the challenge of their reliability, all the more so as the security organs are often involved... -
Robustness of 1.2 kV SiC MOSFET devices
International audience -
Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applicat...
International audience -
Study of MOSFET switching behavior :<br />application to series and parallel ...
The association between several components is one of the key point to increase the power level in power electronics. This problem is encountered either inside the... -
Characterization, mechanisms and memory applications of advanced SOI MOSFETs
The evolution of electronic systems and portable devices requires innovation in both circuit design and transistor architecture. During last fifty years, the main... -
The dynamic range of THz broadband FET detectors
International audience -
Temperature, Back Gate and Polarization Studies in Nanotransistor based THz p...
Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at... -
Threshold voltage study of scaled self-aligned In0.53Ga0.47As metal oxide sem...
A multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology...
