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Nanostructuration of GaAs surfaces : oxidation and nitridation
This thesis focuses on two aspect of GaAs surface treatment using plasma in order to deposit controlled oxide and nitride layers. In both cases, various means of... -
Second Harmonic Generation in GaN-based photonic crystals for single molecule...
III-Nitride semiconductors are promising nonlinear materials for optical wavelength conversion. However second harmonic generation in bulk GaN is weak because GaN is... -
Oxygen photo-adsorption related quenching of photoluminescence in group-III n...
International audience -
Structural, optical and electronic properties of InN films and In rich hetero...
The nitride semiconductors (AlN, GaN, InN) are subject to a large research effort due to their numerous applications, such as light emitting diodes, high power and... -
Dissociation of H-related defect complex in InP using high energy light ions
High energy light ion irradiation has been used to anneal H-related defect complexes and to modify the electronic properties of semi-insulating InP (SI-InP). Raman and... -
Correlation of polarity and crystal structure with optoelectronic and transpo...
International audience -
AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD
AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were... -
Strong coupling of light with A and B excitons in GaN microcavities grown on ...
We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors... -
Thermoelectric and micro-Raman measurements of carrier density and mobility i...
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High Efficiency Class-B power amplifier with dynamic gate biasing for improve...
International audience -
GaN based polar and nonpolar heterostructures grown on ZnO for optoelectronic...
This work focus on the integration of III-nitride materials, by molecular beam epitaxy (MBE), on ZnO based templates and substrates. The objective is to explore the... -
Realization and characterization of AlGaN/GaN HEMTs on silicon for high volta...
This thesis is a contribution to the development of AlGaN/GaN HEMTs on silicon substrates for low frequency and applications under high voltages (typically 600V) as... -
High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of poi...
Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types... -
Wideband High Efficiency High Power GaN Amplifiers Using MIC and Quasi-MMIC Tec...
International audience -
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
International audience -
Gan, Hakka and the formation of Chinese dialects
incorporates elements of an unpublished conference paper presented at ICCL-6 (Leiden University, 19-21 June, 1997) and entitled “preservation and innovation in Gan, and the... -
The instability of the BTB-KELCH protein Gigaxonin causes Giant Axonal Neurop...
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Balun actif bande S/C en technologie GaN
National audience
