Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

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Source ISSN: 0003-6951
Author Tchoulfian, Pierre, Donatini, Fabrice, Levy, François, Amstatt, Benoît, Dussaigne, Amélie, Ferret, Pierre, Bustarret, Etienne, Pernot, Julien
Maintainer CCSD
Last Updated May 8, 2026, 05:11 (UTC)
Created May 8, 2026, 05:11 (UTC)
Identifier hal-00905599
Language en
Rights https://about.hal.science/hal-authorisation-v1/
contributor Semi-conducteurs à large bande interdite (NEEL - SC2G) ; Institut Néel (NEEL) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)
creator Tchoulfian, Pierre
date 2013-11-11T00:00:00
harvest_object_id 006e2f89-ebfe-459a-983e-7653577db16a
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-09-27T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4829857
set_spec type:ART