Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K - 400K
Data and Resources
Additional Info
| Field | Value |
|---|---|
| Source | Microwave Integrated Circuits Conference (EuMIC), 2013 European |
| Author | Rzin, Mehdi, Curutchet, Arnaud, Labat, Nathalie, Malbert, Nathalie, Brunel, Laurent, Lambert, Benoit |
| Maintainer | CCSD |
| Last Updated | May 5, 2026, 12:00 (UTC) |
| Created | May 5, 2026, 12:00 (UTC) |
| Identifier | hal-00987798 |
| Language | en |
| contributor | Laboratoire de l'intégration, du matériau au système (IMS) ; Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS) |
| coverage | Nüremberg, Germany |
| creator | Rzin, Mehdi |
| date | 2013-10-06T00:00:00 |
| harvest_object_id | aed761e3-e0f5-4e31-94e7-e87788425ea9 |
| harvest_source_id | 3374d638-d20b-4672-ba96-a23232d55657 |
| harvest_source_title | test moissonnage SELUNE |
| metadata_modified | 2025-03-17T00:00:00 |
| set_spec | type:COMM |