Correlation of polarity and crystal structure with optoelectronic and transport properties of GaN/AlN/GaN nanowire sensors

International audience

Data and Resources

Additional Info

Field Value
Source ISSN: 1530-6984
Author den Hertog, Martien, Gonzalez-Posada, F., Songmuang, Rudeesun, Rouviere, Jean-Luc, Fournier, Thierry, Fernandez, Bruno, Monroy, Eva
Maintainer CCSD
Last Updated May 9, 2026, 16:41 (UTC)
Created May 9, 2026, 16:41 (UTC)
Identifier hal-00863667
Language en
contributor Matériaux, Rayonnements, Structure (NEEL - MRS) ; Institut Néel (NEEL) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)
creator den Hertog, Martien
date 2012-10-03T00:00:00
harvest_object_id 845aafc6-58de-4ca7-afef-9c030bdf0c47
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-09-27T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1021/nl302890f
set_spec type:ART