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Dielectric oxynitride LaTiO<sub>x</sub>N<sub>y</sub> thin films deposited by ...
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Low Temperature Plasma Synthesis of Nanocrystals and their Application to the...
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Polarization fields in wurtzite strained layers grown on (hkl) planes
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Epitaxial PZT thin films on YSZ-buffered Si (001) substrates for piezoelectri...
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Effect of twins in Ni substrates on the microstructure of La2Zr2O7 films for ...
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Systèmes épitaxiés faiblement liés : le cas Ge/SrTiO3
With the recent developments of the microelectronic industry, the intrinsic limits of the classical CMOS materials are being reached because of the strong... -
Elabotation and characterization of oriented and nanostructured hybrid materi...
The aim of this thesis was to elaborate and characterize hybrid oriented and nanostructured thin films composed of a semiconducting polymer, regioregular... -
Thin crystalline silicon solar cells based on epitaxial films grown at 165 °C...
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Characterization using ion beam analysis of In(Ga)As quantum dots grown by ep...
The integration on silicon of direct band gap materials such as some semiconductors from the III-V group is of a rising interest for tomorrow's optoelectronic devices.... -
Silicon epitaxy below 200°C: Towards thin crystalline solar cells
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On the physical properties of Fe3O4 epitaxial thin films and the spin polariz...
Magnetite Fe3O4 is a promising material for spintronics since band structure calculations predict it to be half-metallic. One thus expect large magnetoresistance in... -
Towards a tensile strained, N doped germanium laser
In this PhD work, we studied different approaches that should lead to a germanium laser. We have experimentally shown the influence of strain and doping on the... -
Strain dependent microstructural modifications of BiCrO3 epitaxial thin films
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Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-jun...
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Development of new gallium nitride based HEMT heterostructures for microwave ...
Nitride based materials are present in everyday life for optoelectronic applications (light emitting diodes, lasers). GaN remarkable properties (like large energy band... -
Lanthanum titanium perovskite compound: Thin film deposition and high frequen...
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Cathodoluminescence of stacking fault bound excitons for local probing of the...
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GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN...
In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition... -
Contribution to the epitaxial growth of aluminum and boron nitrides by chemic...
This work takes place in the context of the development of high crystalline quality supports for optoelectronic and piezoelectric fields. Aluminum and boron nitrides...
