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Transport properties and low-frequency noise in low-dimensional structures
Electrical and physical properties of low-dimensional structures have been studied for the various applications such as electronics, sensors, and etc. Low-frequency... -
Fabrication et caractérisation électrique de résistances à base de nanofils d...
International audience -
Theoretical and experimental study of non-thermal, plasma-assisted gasoline r...
Thèse confidentielle jusqu'au 28 juin 2011, levée de la confidentialité mars 2012. -
Development of a single-chamber solid oxide fuel cell working under methane/o...
This study is devoted to the development of a single-chamber solid oxide fuel cell. Contrary to a conventional solid oxide fuel cell, a single chamber fuel cell works... -
Study about influence of the regime of a dielectric barrier discharge, in a H...
Nous avons étudié un procédé de dépôt par décharge à barrière diélectrique à la pression atmosphérique, pour l'obtention de films organosiliciés contenant des... -
Study at nanoscale, using scanning probe microscopy, of thin dielectric fiali...
In order to continue the scaling of the MOS transistor the replacement of the gate oxide layer by a high K/Metal gate was mandatory. From a reliability point of view,... -
Electrical characterization and reliability of FDSOI transistors with High-k ...
The integration of High-k dielectrics in transistors gate stacks lead to new complex reliability issues. Furthermore new problematics appear with the use of fully... -
Hybrid integration of single electron transistor on a CMOS technology node
This study deals with the hybrid integration of Single Electron Transistors (SET) on a CMOS technology node. SET devices present high potentiels, particularly in terms... -
Technology of monolithic integration of Side JFET
Silicon carbide (SiC) a semiconductor is as wide band gap, notable for its physical properties located between silicon and diamond. The inherent properties of silicon... -
Electrical properties and modeling of Advanced MOS devices : FD-SOI Tri-gate ...
Novel advanced metal-oxide semiconductor (MOS) devices such as fully-depleted-silicon-on-insulator (FD-SOI) Tri-gate transistor, junctionless transistor, and...
