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Développement des techniques de scatterométrie en temps réel pour le suivi de...
The miniaturization of the semiconductor devices is made possible by the improvemen of technological processing steps (such as lithography, etching, etc.). This... -
PMN-PT (lead magnesium niobate-lead titanate) piezoelectric material micromac...
International audience -
Investigation of fabricating a LiNbO3 ultrasonic phased array transducer of m...
36°/Y-cut lithium niobate (LiNbO 3 ) single crystals have been patterned by means of Inductively Coupled Plasma (ICP) deep etching to create ultrasonic arrays... -
Physico- chemical mechanisms involved in the silicon plasma etching cryogenic...
In microelectronic industries, silicon deep etching allows to obtain high aspect ratio structures (MEMS, MOEMS, vias, deep trench isolation...). Cryoetching is one of... -
Silicon epitaxy below 200°C: Towards thin crystalline solar cells
International audience -
Mechanical and chemical damage of optical fiber polymer coating
International audience -
La réception de l'estampe (XVIIIe-XXIe siècles). Pour une approche statistiqu...
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Blue light absorption enhancement based on vertically channelling modes in na...
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Defect analysis and excitons diffusion in undoped homoepitaxial diamond films...
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Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on t...
International audience -
Developpement of an innovative process for shallow trench isolation gap-filli...
Achieved at the beginning of the integrated circuits manufacturing, shallow trench isolation permits to electrically isolate transistors from each other's to avoid...
