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Spin-polarized transport across a MgO(001) barrier: Magnetoresistance and mag...
Epitaxial magnetic tunnel junctions Fe/MgO/Fe(001) exhibit noteworthy behaviors for both small and large MgO thicknesses. In the first case, a strong antiferromagnetic... -
Unintentional incorporation of H and related structural and free-electron pro...
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Metamorphic growth by Molecular Beam Epitaxy and physical characterizations f...
Thesis available online from January 2006Previously available on the website of the Epitaxy Team at IEMNTransferred on http://tel.ccsd.cnrs.fr on May 21st, 2006 (for the new... -
Thermoelectric properties of high quality nanostructured Ge:Mn thin films
We report on the elaboration of germanium manganese nanostructured thin films and the measurement of their thermoelectric properties. We investigate the growth of... -
Misfit dislocation and strain relaxation at large lattice mismatched III-V se...
In this work, we have carried out an extensive TEM investigation of misfit dislocations and strain relaxation in Sb-based III-V epitaxial layers on the GaAs and GaP... -
Confinement électrique et optique dans la filière GaAs : Ingénierie libre par...
Due to the growing interest in VCSELs and the breadth of their application fields, VCSELs are evolving quickly to increase their integration capabilities and... -
Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells...
original title in MBE 2012 : "Structural and optical studies of GaP/Si induced defects in GaAsPN quantum wells grown on Si" -
Optical properties of single ZnTe nanowires grown at low temperature
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Growth of Vertical GaAs Nanowires on an Amorphous Substrate via a Fiber-Textu...
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Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional l...
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III-nitride quantum dots for application in opto-chemical sensors
This thesis work has focused on the synthesis of (In)GaN-based quantum dot (QD) structures by plasma-assisted molecular-beam epitaxy (PAMBE), deposited in both polar... -
Growth and characterization of GaN nanowires and GaN/AlN heterostructure nano...
This work focuses on the growth by plasma-assisted molecular beam epitaxy and on the characterization of GaN nanowires (NWs) and of GaN/AlN NW heterostructures. We... -
Gold-free ternary III-V antimonide nanowire arrays on silicon : twin-free dow...
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Epitaxie de nouvelles hétérostructures pour la filière GaAs : puits/boîtes qu...
Compound semiconductors provide a high flexibility in band structure engineering and cover a wide spectral band, meeting requirements for a large amount of... -
La0.7Sr0.3MnO3 suspended microbridges for uncooled bolometers made using reac...
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Structure of ultrathin antiferromagnetic films for exchange coupling systems:...
La connaissance de la structure est essentielle dans l'interprétation du couplage d'échange qui a lieu à l'interface entre des couches ferromagnétique et...
