24 datasets found

Study of SiGe nanowires growth by chemical vapour deposition and characterization by atomic force microscopy.The use of semiconductor nanowires as building block for...

The decrease of the integrated circuits size lets to increase the performances and reduce the manufacture costs. However, this shrink causes the preponderance of...

This work focuses on the understanding of the mechanisms involved in plasma etching processes used to design sub-20 nm poly-silicon gates for MOS transistors. The...

The microelectronic industry is still ruled up to now by the law of miniaturization or scaling. In particular, in CMOS (complementary metal-oxide semiconductor)...

The European Space Agency and CNES are studying the possibility of sending microsystems in space, especially for the mass gain they represent. To improve the...

The dictates of miniaturization and increased performance followed by microelectronics manufacturers faces currently physical, technological and economic limitations....

In microelectronic industries, silicon deep etching allows to obtain high aspect ratio structures (MEMS, MOEMS, vias, deep trench isolation...). Cryoetching is one of...

Nowadays, microelectronic devices are omnipresent in our everyday life. To make them smaller and smaller as well as smarter and smarter, a new process which consists...

The continuous downscaling in microelectronics imposes increasing demands on the plasma processes and traditional ways for process optimization reach their limits. New...

In order to continue the scaling of the MOS transistor the replacement of the gate oxide layer by a high K/Metal gate was mandatory. From a reliability point of view,...

The integration of High-k dielectrics in transistors gate stacks lead to new complex reliability issues. Furthermore new problematics appear with the use of fully...

This PhD work deals with characterization and electrical modeling of interconnection networks for 3D stacking of advanced integrated circuits. First, characterization...

The main focus of microelectronic industry has been to increase the number of integrated transistors in each circuit thanks to the device miniaturization. However, due...

The lack of cristalline structure in metallic glasses suggests that no mechanical size effect could be expected. However, if the sample size decreases, a transition...

Low frequency (LF) noise and fluctuations in MOS devices has been the subject of intensive research during the past years. The LF noise is becoming a major concern for...

International audience

Since several technological nodes, the scaling of Metal-Oxide-Semiconductor field effect transistors (MOSFET) alone is not sufficient to increase performances of...

Injection Medical Devices are more and more developed. New devices bring innovations in terms of performances and use for classical syringes. Eveon develops a...

Miniaturization of the MOS transistor structure has led to the high thinning of the gate oxide. Hence, degradation and breakdown under electrical stress became one of...

In this work, we have presented a physics-based analytical SET model for hybrid SET-CMOS circuit simulations. A realistic SET modeling approach has been used to...