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A 300 GHz InP/GaAsSb/InP HBT for high data rate applications
International audience -
Metamorphic growth by Molecular Beam Epitaxy and physical characterizations f...
Thesis available online from January 2006Previously available on the website of the Epitaxy Team at IEMNTransferred on http://tel.ccsd.cnrs.fr on May 21st, 2006 (for the new... -
Modeling of inductively coupled plasma Ar/Cl-2/N-2 plasma discharge: Effect o...
International audience -
Study and fabrication of InP integrated photonic sources for high bit rate te...
Advanced modulation formats, encoding data on the phase, polarization or multi-level intensity of the light are currently a hot topic in the telecommunication domain.... -
NO2 gas sensing studies: Impact of geometrical and physical characteristics o...
This paper deals with the influence of technological process steps on electrical and metrological parameters of NO2 gas sensors. The NO2 gas sensors are based on thin... -
Influence of technological process steps on the reproducibility, sensitivity ...
This article deals with an InP based resistive gas sensor. Firstly, the InP gas sensor samples with good reproducibility were evaluated. The fabrication was obtained... -
Studies of electronic and sensing properties of epitaxial InP surfaces for ap...
The aim of this Thesis was a realization and a characterization of a novel nitrogen dioxide (NO2) sensor on the base of n-type indium phosphide (InP) epitaxial layers.... -
Indium phosphide and zinc phosphide luminescent nanocrystals : synthesis, coa...
This PhD investigation focuses on organometallic synthesis of indium phosphide (InP), zinc phosphide (Zn3P2) colloidal semiconductor nanoparticles (NPs) and core/shell... -
III-V heterostructures growth on SrTiO3/Silicon templates
Due to their electrical and optical properties, the integration of III-V semiconductors on Si would open the path to the combination of a various functionalities on... -
Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on t...
International audience
