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Integration limits of etching masks and hybrid dielectric material for interc...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated by low-k materials (porous SiOCH). These porous materials are... -
Development of phase-change materials based on GeTe alloys by MOCVD: applicat...
Phase-Change Random Access Memories (PCRAM) are one of the most promising candidates for next generation of nonvolatile memories. However this technology presents two... -
Analyse de procédés de traitement plasma des résines photosensibles à 193 nm ...
This work focuses on the study of the interactions between plasmas used in microelectronic processes and chemically amplified photoresists. The fabrication processes... -
Integration limits of etching masks and hybrid dielectric material for interc...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated by low-k materials (porous SiOCH). These porous materials are... -
Characterization and modeling of Phase-Change Memories
Within this Ph.D. thesis work new topics in the field of Non-Volatile Memories technologies have been investigated, with special emphasis on the study of novel... -
Study of SiGe nanowires growth by chemical vapour deposition and characteriza...
Study of SiGe nanowires growth by chemical vapour deposition and characterization by atomic force microscopy.The use of semiconductor nanowires as building block for... -
Post Etch Plasma Treatments used for Porous SiOCH Materials Integration for I...
The decrease of the integrated circuits size lets to increase the performances and reduce the manufacture costs. However, this shrink causes the preponderance of... -
Analyse des mécanismes mis en jeu lors de l'élaboration par gravure plasma de...
This work focuses on the understanding of the mechanisms involved in plasma etching processes used to design sub-20 nm poly-silicon gates for MOS transistors. The... -
Development of a new process for electrical isolation of ULSI CMOS ciruits ba...
The microelectronic industry is still ruled up to now by the law of miniaturization or scaling. In particular, in CMOS (complementary metal-oxide semiconductor)... -
Correlation between manufacturing processes, microstructural properties and m...
The European Space Agency and CNES are studying the possibility of sending microsystems in space, especially for the mass gain they represent. To improve the... -
Development and characterization of plasma etch processes for TSV (Through Si...
The dictates of miniaturization and increased performance followed by microelectronics manufacturers faces currently physical, technological and economic limitations.... -
Physico- chemical mechanisms involved in the silicon plasma etching cryogenic...
In microelectronic industries, silicon deep etching allows to obtain high aspect ratio structures (MEMS, MOEMS, vias, deep trench isolation...). Cryoetching is one of... -
Mono- and bimetallic nanoparticles for the metallization of microvias using a...
Nowadays, microelectronic devices are omnipresent in our everyday life. To make them smaller and smaller as well as smarter and smarter, a new process which consists... -
Pulsed Plasmas for Etch Applications
The continuous downscaling in microelectronics imposes increasing demands on the plasma processes and traditional ways for process optimization reach their limits. New... -
Study at nanoscale, using scanning probe microscopy, of thin dielectric fiali...
In order to continue the scaling of the MOS transistor the replacement of the gate oxide layer by a high K/Metal gate was mandatory. From a reliability point of view,... -
Electrical characterization and reliability of FDSOI transistors with High-k ...
The integration of High-k dielectrics in transistors gate stacks lead to new complex reliability issues. Furthermore new problematics appear with the use of fully... -
Analysis and optimization of electrical performance of interconnections netwo...
This PhD work deals with characterization and electrical modeling of interconnection networks for 3D stacking of advanced integrated circuits. First, characterization... -
Study of the grown silicon nanowire 3D integration and physical properties – ...
The main focus of microelectronic industry has been to increase the number of integrated transistors in each circuit thanks to the device miniaturization. However, due... -
Size effects in the mechanical behaviour of metallic glasses
The lack of cristalline structure in metallic glasses suggests that no mechanical size effect could be expected. However, if the sample size decreases, a transition... -
Variability of low frequency fluctuations in sub 45nm CMOS devices-Experiment...
Low frequency (LF) noise and fluctuations in MOS devices has been the subject of intensive research during the past years. The LF noise is becoming a major concern for...
