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Crystal symmetry and pressure effects on the valence band structure of gamma-...
This paper reports on Hall effect and resistivity measurements under high pressure up to 3–4 GPa in p-type gamma-indium selenide (InSe) (doped with As, Cd, or Zn) and... -
Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(1...
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[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices
The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO 2 -capped... -
Surface effects in a semiconductor photonic nanowire and spectral stability o...
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Terahetz detection by heterostructed InAs/InSb nanowire based field effect tr...
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Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown ...
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Nanowire and graphene architectures for Room Temperature THz detection
Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature... -
Electron and hole spin cooling efficiency in InAs quantum dots: The role of n...
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Optical pumping and reversal of hole spin in InAs/GaAs quantum dots
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Threshold voltage study of scaled self-aligned In0.53Ga0.47As metal oxide sem...
A multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology...
