Nanowire and graphene architectures for Room Temperature THz detection

Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10-11 W/Hz1/2, and high-speed response.

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Source 37th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012
Author Vitiello, M, Coquillat, Dominique, Vicarelli, L, Viti, L, Romeo, L, Ercolani, D, Ferrari, A, Scalari, G, Faist, J, Polini, M, Beltram, F, Sorba, L, Pellegrini, V, Knap, Wojciech, Tredicucci, A
Maintainer CCSD
Last Updated May 11, 2026, 08:39 (UTC)
Created May 11, 2026, 08:39 (UTC)
Identifier hal-00816907
Language en
contributor Laboratoire Charles Coulomb (L2C) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
coverage Wollongong, NSW, Australia
creator Vitiello, M
date 2012-09-23T00:00:00
harvest_object_id 8984001c-81e7-42fc-b190-2f37ad5fa63a
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2025-08-13T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1109/IRMMW-THz.2012.6380288
set_spec type:COMM