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Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown ...
International audience -
Nanowire and graphene architectures for Room Temperature THz detection
Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature... -
Electron and hole spin cooling efficiency in InAs quantum dots: The role of n...
International audience -
Optical pumping and reversal of hole spin in InAs/GaAs quantum dots
International audience -
Threshold voltage study of scaled self-aligned In0.53Ga0.47As metal oxide sem...
A multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology...
