Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

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Source ISSN: 0021-8979
Author Perillat-Merceroz, Guillaume, Cosendey, Gatien, Carlin, Jean-François, Butté, Raphaël, Grandjean, Nicolas
Maintainer CCSD
Last Updated May 14, 2026, 13:17 (UTC)
Created May 14, 2026, 13:17 (UTC)
Identifier hal-00787406
Language en
Rights https://about.hal.science/hal-authorisation-v1/
contributor Institute of Condensed Matter Physics [Lausanne] ; Ecole Polytechnique Fédérale de Lausanne (EPFL)
creator Perillat-Merceroz, Guillaume
date 2013-02-11T00:00:00
harvest_object_id 367d18ee-3baf-4664-898b-8166f589076d
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2024-11-18T00:00:00
relation info:eu-repo/semantics/altIdentifier/arxiv/1302.3139
set_spec type:ART