Semiconductor mode-locked lasers (MLLs) are at the centre of interest for a large range of photonic applications (WDM, OTDM, radio over fiber ...). Because of their outstanding performance coming from the 0D carrier confinement, the use of quantum dots (QDs) nanostructures as active material for MLLs has led to the generation of ultra-short and high frequency pulses with low noise. For the present thesis studies were carried out on InAs based QDs laser growth on InP (113)B in order to increase the number of stacked QDs layers while maintaining a high density of QDs to maximize modal gain. Work has also been focused on layers stacking and obtaining real QDs using misoriented (001) InP substrate. Structural qualities have been confirmed using AFM, polarized photoluminescence and broad laser characterization. A shallow ridge waveguide optimization technology has been realized on conventional (001) InP substrate. We have confirmed the improved injection efficiency of QDs due to lower lateral carrier diffusion. Mode-locking was obtained on single and two sections InAs based QDs lasers elaborated on (001) InP misoriented substrate and (113)B InP substrate, from 20 to 83 GHz. The RF linewidth at -3 dB is as low as 20 kHz indicating a ML regime with a low phase noise. Finally, we have studied the temperature effect on the QDs and QDashes InAs/InP multi-section MLLs.
