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Etude des Lasers à Semiconducteur au Second Ordre : Bruit d'Amplitude - Bruit...
Les fluctuations d'intensité ou de fréquence observées en sortie de cavité émettrice représentent une caractéristique essentielle des lasers à semi-conducteur. Le... -
Pulse generation from mode locked VECSELS AT 1.55 um
In a first step, we have developed and implemented VECSEL structures, aiming at maximizing the laser output power through a proper thermal management. The fabricated... -
Generation and amplification of surface plasmon polaritons at telecom waveleng...
The field of plasmonics is experiencing a rapid development, due to the interest in studying the behavior of light at the nanometer scale. Key ingredients of plasmonics... -
Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
International audience -
InAs/InP quantum dots mode-locked lasers for the optical telecommunications a...
Semiconductor mode-locked lasers (MLLs) are at the centre of interest for a large range of photonic applications (WDM, OTDM, radio over fiber ...). Because of their... -
Electrical Modeling of Semiconductor Laser Diode for Heterodyne RoF System Si...
International audience -
Intégration hétérogène III-V sur silicium de microlasers à émission par la su...
The ever-growing demand for high-volume fast data transmission and processing is nowadays rapidly attaining the intrinsic limit of microelectronic circuits to offer...
