This thesis deals with the realisation of a frequency transposition block from 1 to 20 GHz based on MEMS components. It results in the design and fabrication of a new kind of tuneable RF MEMS capacitor based on a rotational gyroscope structure for the actuation part and on a surface variation for the capacitance change. Compared to other architectures published, this structure presents the advantage to have an actuation part (the MEMS part) and a RF part (the capacitor) that are electrically separated in order to avoid the phenomenon of self-actuation with RF signal crossing power. Another advantage of this structure is the possibility to simultaneously tune 8 different capacitors on a single chip, with only one actuation system. The fabrication of the chips requires the use of a SOI wafer for the MEMS part and a glass wafer for the RF part, which offers on chip packaging opportunity. This work also focused on the study of the pull-in effect in the case of curved comb-drives, highlighting the most critical physical parameters for the design. This parametric study has been used to improve the actuation structure and more particularly the topology of the curved comb-drives by variation of the finger width and gap. These modifications were done in order to push the pull-in effect out of the actuation operating range. This new tuneable capacitor has been integrated into a simple VCO circuit on alumina to validate the RF performances and could be associated to a RF mixer in order to realize the full frequency transposition block
