We report on the synthesis of SiGe layers on silicon by gas immersion laser doping. GeCl(4) molecules are adsorbed on the surface and further incorporated into the Si top layer by a pulsed laser induced melt/regrowth process. Structural and chemical characterizations of the SiGe layers have been performed by using complementarily Rutherford backscattering spectrometry and x-ray Diffraction which indicate that Ge incorporation in the Si matrix results in a fully strained SiGe layer with gradual Ge concentrations reaching up to 18.5% near the surface. (C) 2008 American Institute of Physics.
