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Vacancy defect and carrier distributions in the high mobility electron gas fo...
Using a combination of advanced characterization tools (positron annihilation spectroscopy, conductive-tip atomic force microscopy, and high-field magnetotransport),... -
Study of the epitaxial growth of III-V phosphorus-based semiconductor heteros...
La fabrication d'hétérostructures de semi-conducteurs III-V de qualité repose sur la connaissance des surfaces, l'optimisation de la formation des interfaces et la... -
Coupled domain structures in superconductor/ferromagnet Nb-Fe/garnet bilayers
International audience -
Emission of Terahertz Radiation from Two-Dimensional Electron Systems in Semi...
This paper reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon... -
Hot Carrier Solar Cell: From Simulation to Devices
International audience -
Pseudomorphic SiGe/Si(001) layers synthesized by gas immersion laser doping
We report on the synthesis of SiGe layers on silicon by gas immersion laser doping. GeCl(4) molecules are adsorbed on the surface and further incorporated into the Si... -
Kinetics of Si capping process of Ge/Si(0 0 1) quantum dots.
The overgrowth of Si on Ge/Si(0 0 1) islands in a UHV chemical-vapor deposition system is investigated by reflection high energy electron diffraction (RHEED), atomic... -
Tuning the Schottky barrier height at MgO/metal interface
International audience -
Strongly correlated electrons : from two dimensions to heterostructures
The properties of electrons in two dimensions (2D) raise fundamental questions that have been extensively explored by condensed matter theory. Extending standard... -
Sequential growth of bistable copper-molybdenum coordination nanolayers on in...
Sequential growth in solution is a powerful tool to control the growth of coordination networks on surfaces. We used this approach to prepare nanolayers of the... -
3D Integration of Si/SiGe heterostructured nanowires for nanowire transistors.
The goal of this thesis is to build and characterize nanowire based field-effect-transistors. These FET will have either back or wrapping gate using standard CMOS...
