Electron mobility in phosphorous doped {111} homoepitaxial diamond
Data and Resources
Additional Info
| Field | Value |
|---|---|
| Source | ISSN: 0003-6951 |
| Author | Pernot, Julien, Koizumi, Satoshi |
| Maintainer | CCSD |
| Last Updated | May 10, 2026, 01:07 (UTC) |
| Created | May 10, 2026, 01:07 (UTC) |
| Identifier | hal-00853416 |
| Language | en |
| contributor | Semi-conducteurs à large bande interdite (NEEL - SC2G) ; Institut Néel (NEEL) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS) |
| creator | Pernot, Julien |
| date | 2008-08-07T00:00:00 |
| harvest_object_id | 01eed1d1-dd75-46ba-8ec3-a76b9c49b248 |
| harvest_source_id | 3374d638-d20b-4672-ba96-a23232d55657 |
| harvest_source_title | test moissonnage SELUNE |
| metadata_modified | 2025-09-27T00:00:00 |
| relation | info:eu-repo/semantics/altIdentifier/doi/10.1063/1.2969066 |
| set_spec | type:ART |