-
Optical Properties of α- Revealed by ab initio Calculations
International audience -
Temperature influence on the production of nanodot patterns by ion beam sputt...
The temperature influence (T=300–625 K) on the production of nanodot patterns by 1 keV Ar+ ion beam sputtering (IBS) of Si(001) is addressed. The surface morphology... -
Structural and electronic properties of p-doped silicon clathrates
International audience -
Polarization and Frequency studies of Si MOSFET Terahertz Detectors
Test chips with Si MOSFETs integrating bow tie antennas are investigated to check the polarization and frequency dependence of THz sensitivity. The azimuthal angle... -
Terahertz Imaging Using Strained-Si MODFETs as Sensors
International audience -
Photoluminescence decay dynamics of non-interacting silicon nanocrystals
Time-resolved photoluminescence measurements on size-selected silicon nanocrystals have been carried out in order to elucidate the nonexponential behavior of the... -
Multiexponential photoluminescence decay in indirect-gap semiconductor nanocr...
The origin of the multiexponential photoluminescence (PL) decay of Si quantum dots (QDs) has been debated for a long time. We present studies combining time-resolved... -
Temperature, Back Gate and Polarization Studies in Nanotransistor based THz p...
Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at... -
Modeling magnetotransport in inhomogeneous (Ge,Mn) films
International audience
