Terahertz Imaging with InP High-electron-mobility Transistors

In this work, the performance of InP-based HEMTs as a THz detector was experimentally studied. The nature of the THz rectification by the two-dimensional plasmons in which the DC drain current variation Delta I-d becomes maximal around the threshold voltage was observed. Based on the imaging measurement, it was confirmed that our HEMTs device can work for sensitive THz imaging at 0.3 THz. The directivity of the detector was characterized with the maximum responsivity of 26.1 V/W at theta = 160 degrees.

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Additional Info

Field Value
Source Proceedings of SPIE
Author Watanabe, Takayuki, Akagawa, Keisuke, Tanimoto, Yudai, Coquillat, Dominique, Knap, Wojciech, Otsuji, Taiichi
Maintainer CCSD
Last Updated May 11, 2026, 11:13 (UTC)
Created May 11, 2026, 11:13 (UTC)
Identifier hal-00814213
Language en
contributor Laboratoire Charles Coulomb (L2C) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
creator Watanabe, Takayuki
date 2011-04-25T00:00:00
harvest_object_id d3c3a42f-fa9f-441b-b8ab-467e4c8bbc38
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2024-06-04T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1117/12.887952
set_spec type:COMM