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Terahertz Imaging with InP High-electron-mobility Transistors
In this work, the performance of InP-based HEMTs as a THz detector was experimentally studied. The nature of the THz rectification by the two-dimensional plasmons in... -
Development of new gallium nitride based HEMT heterostructures for microwave ...
Nitride based materials are present in everyday life for optoelectronic applications (light emitting diodes, lasers). GaN remarkable properties (like large energy band...
