In this paper we have studied strained structures wells based on GaInAsSb over GaSb substrate. The GaSb substrates allow the mesh accordability with the GaInAsSb solid solution in the range 1.7-3.5 μm. The conduction band and valence discontinuities are evaluated. A Basic source-detector direct transition has been demonstrated at 2-3 μ m. The III-V based GaSb components have many applications in optical fiber links, radar transmissions through atmospheric windows or air detection and spectroscopic analysis of the gases. From this structure it is possible to make semiconductor lasers operating continuously at room temperature, low non-cooled detectors
