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HDI Organic Technology Integrating Built-In Antennas Dedicated to 60 GHz SiP ...
International audience -
60 GHz Patch Antenna Using IPD Technology
Best non-student Paper prize - 1st place -
Towards an Autonomic Piloting Virtual Network Architecture
International audience -
AAVP: An Innovative Autonomic Architecture for Virtual network Piloting
International audience -
Thermomechanical analysis and modeling of the extrusion coating process
International audience -
Global modelling and simulation of a Coriolis vibrating micro-gyroscope for q...
International audience -
Compact and low cost substrate integrated waveguide cavity and bandpass filte...
International audience -
Ferrite-Loaded Substrate Integrated Waveguide Switch
International audience -
Antipodal fin-line waveguide to substrate integrated waveguide transition
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Corrugated Goubau lines to slow down and confine THz waves
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Long wavelength determination of a strained quantum well structure based on G...
In this paper we have studied strained structures wells based on GaInAsSb over GaSb substrate. The GaSb substrates allow the mesh accordability with the GaInAsSb solid... -
Achievement and perspective of GaN technology for microwave applications
International audience -
GaN technology for microwave applications
International audience -
Antenna on PEN substrate for Millimeter-wave applications
Session: Low-Profile Wideband Antennas. Paper Code: 301.6, -
End-Fire Radiating Antenna on IPD technology for 60 GHz Communications
International audience -
Design of hybrid-planar SIW High frequency filter in LTCC Technology
Control of communication and information is a key asset in the strategies of power, whether military, political or commercial. Whoever is able to transmit information... -
Enhancement of critical temperature and phases coexistence mediated by strain...
The structural and magnetic properties of MnAs epilayers grown on GaAs(111)B have been investigated by x-ray diffraction and magnetometry. The strain evolution of the... -
Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT
Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are... -
Low loss terahertz planar Goubau line on high resistivity silicon substrate
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Confinement and losses of THz planar Goubau lines fabricated on a thin silico...
International audience
