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Croissance, mise en ordre chimique et relaxation des contraintes épitaxiales ...
The relaxation of strain in epitaxial FePd films, grown by MBE, has been studied thanks to RHEED, TEM and STM. The preferential relaxation by microtwins in well L10-... -
Spin-polarized transport across a MgO(001) barrier: Magnetoresistance and mag...
Epitaxial magnetic tunnel junctions Fe/MgO/Fe(001) exhibit noteworthy behaviors for both small and large MgO thicknesses. In the first case, a strong antiferromagnetic... -
Study of the epitaxial growth of III-V phosphorus-based semiconductor heteros...
La fabrication d'hétérostructures de semi-conducteurs III-V de qualité repose sur la connaissance des surfaces, l'optimisation de la formation des interfaces et la... -
Metamorphic growth by Molecular Beam Epitaxy and physical characterizations f...
Thesis available online from January 2006Previously available on the website of the Epitaxy Team at IEMNTransferred on http://tel.ccsd.cnrs.fr on May 21st, 2006 (for the new... -
Confinement électrique et optique dans la filière GaAs : Ingénierie libre par...
Due to the growing interest in VCSELs and the breadth of their application fields, VCSELs are evolving quickly to increase their integration capabilities and... -
III-nitride quantum dots for application in opto-chemical sensors
This thesis work has focused on the synthesis of (In)GaN-based quantum dot (QD) structures by plasma-assisted molecular-beam epitaxy (PAMBE), deposited in both polar... -
GaN/Al(Ga)N quantum wells for intersubband optoelectrnics in near-, mid- and ...
This work reports on electronic design, epitaxial growth and characterization of GaN/Al(Ga)N quantum wells which constitute the active region of intersubband (ISB)... -
Growth and characterization of GaN nanowires and GaN/AlN heterostructure nano...
This work focuses on the growth by plasma-assisted molecular beam epitaxy and on the characterization of GaN nanowires (NWs) and of GaN/AlN NW heterostructures. We... -
Croissance de boîtes quantiques In(Ga)As sur substrats de silicium et de SOI ...
This thesis focuses on the study of the self-organized growth of In(Ga)As quantum dots (QDs) on a silicon substrate. The purpose of this work is to pave the way for a...
