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Systèmes épitaxiés faiblement liés : le cas Ge/SrTiO3
With the recent developments of the microelectronic industry, the intrinsic limits of the classical CMOS materials are being reached because of the strong... -
Elabotation and characterization of oriented and nanostructured hybrid materi...
The aim of this thesis was to elaborate and characterize hybrid oriented and nanostructured thin films composed of a semiconducting polymer, regioregular... -
Characterization using ion beam analysis of In(Ga)As quantum dots grown by ep...
The integration on silicon of direct band gap materials such as some semiconductors from the III-V group is of a rising interest for tomorrow's optoelectronic devices.... -
On the physical properties of Fe3O4 epitaxial thin films and the spin polariz...
Magnetite Fe3O4 is a promising material for spintronics since band structure calculations predict it to be half-metallic. One thus expect large magnetoresistance in... -
Towards a tensile strained, N doped germanium laser
In this PhD work, we studied different approaches that should lead to a germanium laser. We have experimentally shown the influence of strain and doping on the... -
Dromedary milk fat: thermal and structural properties 1. Crystalline forms ob...
International audience -
Liquid-phase epitaxy of Pr: LiYF4 for waveguide lasers
To achieve miniaturized laser sources based on dielectric materials for integrated photonic devices, this thesis deals with the development of visible compact laser... -
Development of new gallium nitride based HEMT heterostructures for microwave ...
Nitride based materials are present in everyday life for optoelectronic applications (light emitting diodes, lasers). GaN remarkable properties (like large energy band... -
Contribution to the epitaxial growth of aluminum and boron nitrides by chemic...
This work takes place in the context of the development of high crystalline quality supports for optoelectronic and piezoelectric fields. Aluminum and boron nitrides...
