This work contributes to the evaluation of the technique of second harmonic generation induced by a quasi-static electric field, or EFISHG, applied to the field of microelectronics. A description of the principle of the technique EFISHG based on nonlinear optics, explains the physical origin of this method. A state of the art has identified two areas of applications related to microelectronics failure analysis, using the measurement of the internal electric fields in integrated circuits, and reliability by the studies of both charge trapping at the interface Si/SiO2 and degradation called Negative Bias Temperature Instability or NBTI. This manuscript presents the different steps that led to the development of a bench test for evaluating the applicability of the EFISHG technique. The experimental results obtained with it prove the potential of the EFISHG technique to characterize and accelerate the aging NBTI.
