This thesis presents a wide range of graphene activity: from chemical vapor deposition (CVD) of graphene growth on Cu surface, to two dimensional mesoscopic graphene devices for superconductivity studies. I first show that, in the CVD process of fabricating graphene, a cyclic injection of carbon feedstock under a constant hydrogen background allows to suppress the formation of multilayer graphene, which has plagued this fabrication method since its early days. With the CVD grown graphene,I demonstrate applications such as flexible transparent electrodes. Mobility of our CVD graphene at 4 K temperature reaches as high as 8,000 cm^2/V/s. Chemical treatment studies based on copper etchant show that control of the density of defects in CVD graphene can be precisely achieved by a chemical route. This thesis finishes at sub 1 K temperature transport measurements of a new type of superconducting array decorated graphene transistor. This type of hybride system is a prototypical model for quantum phase transition studies. I then show that the experimental observations are in good agreement with the predicted superconductor-to-metal quantum phase transition at the zero-temperature limit.
