Nine years have passed since the discovery of graphene, all of them dense of research works and publications that, piece by piece, shed more light on the properties of this extraordinary material. With more understanding of its best qualities, a more precise prospect of the applications that would better pro t from its use has been de ned. High Frequency devices, like mixers and power ampli ers, and Flexible and Transparent electronics are the most promising elds. In those elds great attention is devoted to two subjects: the downscaling of the dimensions of the graphene transistor, in order to reduce the carriers travel time and attain increasingly larger fractions of ballistic electronic transport; and the optimization of the contact parasitics. Both are highly bene cial to the maximization of the device's RF Figures Of Merit. In this thesis, Two models have been developed to address such topics: the rst served both the quasi-ballistic large-area graphene and graphene nanoribbon transistors. It demonstrated the correlation between ballistic and di usive electron transport and device length, and extracted the large signal DC currents and transconductances. The second reproduced the high-frequency conduction through graphene and its contact parasitics. The latter also motivated the development and fabrication of a RF test bed on a dedicated plastic technology, enabling the RF characterization of the contact impedance and of the speci c interfacial impedance of monolayer CVD graphene.
