This work is based on the analysis and optimization of an alternative material to replace metallic interconnections of integrated circuits. This material is an SiO2 matrix containing Siliconnanoclusters (Si-nc) and Erbium ions (Er3+). Thanks to an energy transfer between Si-nc and Er3+, the strong absorption of Si-nc in the visible range results in the indirect excitation of Er3+ ions that thus emit at 1.5 μm. The goal is to optimize the emission properties of Er3+ at 1.5 μm, and for that, to maximize the energy transfer between Si-nc and Er3+. First, the work is directed on thermal treatments during and after the deposition. Then, we analyze the influence of the film thickness on the material's optical properties and we show that thinnest films (< 150 nm) contain a low number of that reduces the number of excited erbium. We demonstrate that this problem can be overcome by increasing the silicon concentration, hence raising the number of sensitizers for Er3+. It is also shown that Er3+ ions benefit from a multilevel excitation by Si-nc sensitizers. A second part of the work consists in the realization of light-emitting diodes (LEDs) and to optimize their emission at 1.5 μm. We show that thickness and silicon excess must be chosen concomitantly to optimize optical and electrical properties of LEDs. In a last part we show that LEDs' properties can be enhanced using nitrogen-based matrices like oxynitrides or nitrides as hosts for Er3+.
