The work presented below show my work since the beginning of my thesis in 1986. They were made entirely in the research center in Marcoussis Alcatel in order to design, build and test of optoelectronic semiconductor components for applications in optical telecommunications. These components are made of indium phosphide (InP ) and are intended to emit or detect light at wavelengths near 1550 nm or 1300 waves after application. I have enjoyed all the necessary infrastructure for the development and outcome of projects covering both technology ( epitaxy and structure of materials) as the means of characterization experiments to the system through the use of flat platforms available to test Alcatel. The results presented here are therefore the result of a team effort , I will focus on the end of each paragraph to clarify my personal contribution to the results.
