This memory relates to prepare and study the direct current sputtered ZnO thin films.The structural analysis shows that the heat treatments during the deposition and after deposition in air have the similar influence to increase the grain size until 250 °C. From this critical temperature, the grain size increases when the annealing temperature increases, while it decreases slightly with increasing deposition temperature. The morphology study shows that the deposition temperature has a more significant influence on the surface roughness than that in air from room temperature to 470°C. The elctrical resistivity decreases when the deposition temperature increases, which could be mainly due to the quality of the structure. On the contrary, the annealing in air after deposition degrades the film electrical resistivity. The second part of the electrical study is the 1/f noise measurement. The resuts show that the noise is very sensitive to the deposition temperature, which influence directly the samples crystal structure. The value measured in different directions, parallel or perpendicular to the growth orientation, are different. Furthermore the noise density could be much higher under UV illumination, which is explaines by a developed model based on the film photoconductivity and the defects in the material. The photothermal infrared radiometry has been used to analysis the material thermophysical characterization. This technique permits to determine the optical and thermal parameters of the sample. The theoretical study of the photothermal signal evolution as a functionof the modulated frequency has shown the conditions where the parameters could be measured accurately.
