Silicon non linear optics is of considerable interest to the scientific community because of its applications to integrated optoelectronics. In order to observe non linear phenomena at a reasonable power, one has to work with very high confinement factor (Q/V) optical resonators. As they are now a fully mastered planar technology, two-dimensional photonic crystal microcavities are an efficient way of actually obtaining such resonators in silicon. In this thesis, an application of photonic crystal microcavities to telecom wavelength detection is demonstrated. Bulk silicon is transparent at these wavelengths, except when working at very high power density. Only then, two-photon absorption (TPA) becomes significant. In our detector, TPA is enhanced in the microcavity. A metal-semiconductor-metal (MSM) junction then ensures very fast carrier collection. We studied the physics of the detector and focused on two aspects: collection of carrier in a photonic crystal, and impact of the metal on the optical quality factor. Standard models for dark current and photocurrent in MSM junctions were adapted to the photonic crystal case study. Fabrication of the photonic crystal junction was carefully undertaken and optimized in the clean room of the IEF laboratory. The current circulating in the fabricated device resonates as the same wavelength as the optical cavity. Response can be as high as 90 mA/W, and the optical-electrical bandwidth is larger than 1 GHz. In addition to the demonstration of the detector, some original results were obtained. It is possible to control the carrier concentration in photonic crystal microcavities by tuning the external polarisation of the MSM junction. Finally, the detector allows one to measure important parameters of the physics of the cavity, such as the residual linear absorption coefficient, and the thermal resistance.
