The purpose of this work is to consist in the optimization and implementation of a highvoltage Planar periphery, which allowed to obtain the blocking-voltage more than 2000V. It appears that the periphery type pocket can satisfy the need in high-voltages ranges. In the first time, based on 2D simulations using the ATHENA and ATLAS softwares, we have optimised this periphery. The results show that the active dose is one important parameter for to control. The junction depth and the length of the pocket are the other parameter influenced on the blocking-voltage. The variation of blocking-voltage has been presented versus one of these parameters. Sensitivity analysis of blocking-voltage capability of the periphery single-pocket type in relation to the active dose gives a design methodology for optimum determination termination. Based on this study, we developed the periphery double-pocket type in order to weIl control the active dose and to improve the blockingvoltage. Then, in order to validate the computed results, high-voltage test diodes are implemented in silicon. The experimental results show that the ideal breakdown voltage can be achieved with the optimum periphery double-pocket type. The experimental characteristic of blockingvoltages shows at one the feasibility and the excellent performance in reasonable agreement with the numerical results. Finally, in the last section, the leakage currents of the test diodes are studied. The results clearly show that the charges in the field oxide have a great influence on the blocking-voltage and the leakage CUITent of the devices.
