Today's Power Electronics requires semi-conductor devices with better performance, both ir static and dynamic modes. This requirements include low on-state and switching losses, higr. switching speed, high switching off capabilky, etc. MCT is one of the new devices that may be able to meet the above requirements. Thanks to its structure, which combines thyristor and MOS the MCT offers low on-state voltage and easy drive. This thesis is composed of two parts. In the first part, we présent a study of the behavior single MCTs, available today, in différent commutation modes (hard switching, ZVS, ZCS) and in the case of overload (switching off capability and RBSOA). This part of the study involves twe différent and complementary methods : the expérimental method using the Power Electronic; Analogical Simulator SAEP and the inside physics method based on qualitative and simplifiée modeling. In the second part of the thesis, we investigate MCTs in séries and parallel associatior modes. This study highlights the problems that arise during the conception of high voltage anc high current MCT commutators and indicates their possible solutions.
