This thesis focuses on two areas of research related to the study and the development of micro- and nanofluidic transistors with SOE interface (for Oxide Semiconductor Electrolyte).The first part of the manuscript deals with the fabrication of silicon membranes characterized by periodic arrays of nano-channels (i.e. diameter close to _ 100nm).For that, we used a specific electrochemical etching of silicon process supported by a pre-masking. The arrays of pores obtained during this work are up to date at the state of the art for this technique in terms of pore density. These so-called sub-micrometric structures are characterized by densities from 1 to 8pores:m��2 with aspect ratio greater than 50. Then, a technological etching process of the silicon substrate's back-side has been optimized to produce high density nano-channels membranes with typicalsurfaces about 0; 1mm2. These structures characterized by good properties in terms of selectivity, permeability and specific area will be fully adapted to the fabrication of the future nanofluidic transistors.The second part of the manuscript reports the study of the -potential behavior in SOE polarisable interfaces. This parameter which is correlated by Grahame equation to the counter-ionic density present in the di_use mobile layer, can directly influence the selective transport phenomena of charged species at the nano-channel scale. During this thesis, _ potential characterization of SOE interfaces has been achieved bystreaming current technique and colloidal probe AFM technique. Alumina and silica insulating layers have been specifically chosen to ensure a negligible influence of leak agecurrents ( 10pA:cm��2) and a maximum charge density attracted or repelled in the liquid under gate voltage (> 1mC:m��2). However, no variation of _ potential has been observed with none of the techniques, on both materials. In parallel, we developed atheoretical model to describe _ potential behavior in solution (vs. pH, ionic strength and polarization), which takes into account the charge regulation phenomenon close to the solid/liquid interface. Results of simulation clearly emphase that we should observe a non negligible variation of _ potential in our experimental conditions ( 10mV ).Therefore, one can wonder about the behavior of ionic charges transfer in the electrolyte under polarization. We propose an explanation that implies only charge adsorption close to the solid/liquid wall, which leads to any modification of the counter-ionic densityin the diffuse layer (i.e. no modulation of _ potential).All the results presented in this thesis, will open perspectives on development and characterization of nanofluidic transistors, in order to integrate them into future lab on chip
