The objective of this work is to design and characterize a millimeter-wave front-end usingthe optimized slow-wave transmission lines S-CPW in advanced CMOS technologies. The qualityfactor of these transmission lines is twice to three times higher than that of the conventionaltransmission lines such as microstrip lines and coplanar waveguides.In the first chapter, the influence of CMOS scaling-down on the performance of transistors atmillimeter-wave frequencies and on the transmission lines was studied. In addition, a state of the artwith regard to the performance of the front-end was presented. The second chapter concerns about therealization of the S-CPW lines in different CMOS technologies and the validation of an electricalequivalent model. The third chapter is dedicated to the design of 60-GHz power amplifiers using theseS-CPW lines in CMOS 45 and 65 nm technologies. This study highlighted the performanceenhancement of power amplifiers operating at millimeter-wave frequencies by using the slow-wavetransmission lines. A design method based on the electro-migration rules was also developed. Finally,a low noise amplifier and an antenna switch operating at 60 GHz were designed in CMOS 65 nm inorder to generalize the impact of such transmission lines on the performance of the millimeter-wavefront-end.
