The objective of the thesis is to realize the integrated optical sensors with high sensitivity using intensity interrogation method for chemical and biological analyte detection. For this purpose, two approaches, hybrid integration and monolithic integration, have been explored theoretically and experimentally during this thesis. After a review of the design and analysis tools of optical waveguide and micro-ring resonators, the manuscript reports an experimental demonstration of a highly-sensitive intensity-interrogated optical sensor based on cascaded III-V semiconductor Fabry-Perot laser and silicon-on-insulator ring resonator. The low-cost easy-to-fabricate Fabry-Perot laser serves as a reference comb for the sensing ring in contact with liquid sample. The Vernier effet has been exploited in the detection scheme using intensity interrogation mode. The sharp emission peaks of the FP laser with high spectral power density result in a high sensitivity for the sensor compared to previously investigated all-passive double-ring sensor. The temperature compensation method has also been investigated numerically to improve the performance of the sensor. Concerning the potential monolithic integration of laser and sensing waveguide, the interface between oxide and non-oxide after wet oxidation of buried AlGaAs has been investigated at the Technology Centre of LPN/CNRS. The vertical oxidation of GaAs or AlGaAs with low Al content activated by a neighbouring oxidized Al-rich AlGaAs layer has been discovered experimentally. To limit the vertical oxidation and reduce the roughness of the interface, the waveguides with buried oxide layer on superlattice sample and standard sample have been fabricated and characterised. The key role of hydrogen incorporation in the activation of the oxidation process for GaAs or AlGaAs materials with low Al content has been shown experimentally. Finally, this thesis reports the fabrication and the characterisation results of a Fabry-Perot laser working on TM mode which is an important building block for highly-sensitive monolithically-integrated circuit.
