In this work, we design and characterize semiconductor sources of two-photon states for integrated quantum information. These devices are based on spontaneous parametric down-conversion in AlGaAs waveguides and emit photon pairs at room temperature and telecom wavelength. The first source is a twin photon emitting laser diode, based on a modal phase-matching between an electrically injected Bragg laser mode at 775 nm and the telecom photon modes within the same waveguide. We describe the structure design, its linear and nonlinear optical behaviour, and its characteristics under electrical current injection. The achievement of laser emission and second harmonic generation in the same device open the way towards an ultra-compact source of photon pairs. The second device under study is based on a transverse pumping geometry in which a laser beam impinging on top of the waveguide produces two counterpropagating waveguided telecom photons. We explore the huge versatility of the two-photon quantum state generated by this source, namely the possibilities of state engineering in the frequency domain that are inabled by this geometry. We also present the first experimental demonstration of polarization entangled photon pairs achieved with this device, together with a model allowing to predict the entanglement quality from the spatial and spectral distribution of the pumping beam. These sources of non classical states of light, compact and capable of electrical injection on chip are excellent candidates for future photonic implementations of quantum information.
