Phase Change Random Access Memories (PCRA) are recognized as very promising candidate for the next-generation nonvolatile memory because of their excellent operating speeds and endurance. However, two major problems must be solved to allow their breakthrough in the memory market, namely a low period of data retention at high temperatures and too large power consumption. In this thesis, several new phase change materials based on chalcogen elements were studied in order to address the market for embedded memories operating at high temperatures. GeTe material properties have been compared to that of the reference material Ge₂Sb₂Te₅ and the inuence of doping with nitrogen, carbon or boron in GeTe material was estimated. It has been observed a large improvement in thermal stability of the GeTe amorphous phase compared to that of Ge₂Sb₂Te₅, even more exacerbated by the doping. The process ow of a new stack is described and the impact of connement on energy consumption was assessed on the material Ge₂Sb₂Te₅ through an analysis by atomic force microscopy. An extension of the thesis work was done by focusing on the infrared chalcogenide glasses for optical space. It was found that the addition of silver iodide in glassy systems GeTe and GaGeTe improves their thermal stability and increases their infrared transmission windows.
