In the context of the predetermination of switching losses and EMC (ElectroMagnetic .Compatibllity) performances of static converters during their technological design in Power Electronics, this thesis deals with accurate modelling of the switching cell MOSFET-PIN Diode. In this study three aspects having significant influences on the wave forms of commutations as weIl of the power part as that of command are treated: i) the interconnections and the parasitic elements related to the geometrical implementation and the choice ofthe technology ofrealisation of static inverter ii) the dynamics of charges in the central zone of bipolar semiconductors devices (here a pin diode) which is of distributed nature Hi) the non-lînear stray capacitances of MüSFET particularly the input and Miller capacitance being dominant during comm~tation The model of switching cell is validated by comparing the simulations and measurements on the prototype built for this purpose. It was s~own that the d~.main of yalidity of the model is much broader compared to the existing models: the model is relatively ro.bust against the changes of the conditions of the circuit surrounding the semiconductor components and the variations ofoperating point. The purpose of applications presented in the last chapter is to show at frrst the importance of the parasitic environment of the semiconductors in pre~ise modelling of static converters and then the possibility of making compatible the switching cell model to the more complex cases (several switches in parallel). Related prototypes are realised for each application and mea~urementresults are discussed.
