Novel manufacturing techniques, such as nanoscale self-assembly or nanoimprint, allow a cost-efficient way to fabricate high-density crossbar matrices (1012 nanodevices/cm2). However, it is expected that these technologies will be accompanied by a significant increase of defects and dispersion in device characteristics. Thus, programming these crossbars require new computational techniques that possess high tolerance for such variations. In this context, approaches based on neural networks are promising for configuring nanodevices, since they provide a natural way for tolerating low yields and device variations. The main objective of this thesis is to explore such a neural-network approach, by examining factors such as efficiency and reliability, using the memristor crossbar architecture or neurocrossbar (NC). We introduce algorithms for learning the logic functions on the NC, and the tolerance of NC against static defects (stuck-defect) and dispersion of device properties is discussed. Probabilistic analytical models for predicting the convergence of NC are proposed and compared with Monte Carlo simulations, which take into account the impact of each type of defect and dispersion. These analytical models can be extrapolated to study large-sized NCs. Finally, the effectiveness of the proposed methods is experimentally demonstrated through the learning of logic functions by a real NC made of Optically Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET).
