This thesis investigates experimental characterisation and understanding of InAs/InP(311)B quantum dots media for laser and SOA applications at 1,55 µm. In the first part, using an optically pump planar quantum dot waveguide, we demonstrated the first laser emissions at 1,52 µm at room temperature on excited state (1,46 µm) and ground state. Then, we developed experimental techniques and realised measurements of inhomogenously linewidth broadened optical gain media, losses and carrier state filling. Excited and ground state polarisation emission have also been demonstrated. The second part concerne semiconductor optical amplifier devices (monomode ridge waveguide). We firstly had to design and set up an opto-mechanical mounting for semiconductor optical amplifier characterisation and then to fabricate polarisation maintaining micro-lenses for optical coupling. This allowed the first realisation of saturation absorption on these waveguides with a pump-probe experiment. Two (at least) contributions to the ground state radiative lifetime have been demonstrated. Pump-tunable probe homogenous line width broadening measurement has also been investigated.
