Impact of BEOL stress on BiCMOS9MW HBTs

Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed out. Dummies structures were embedded for both DC and HF characterizations which showed a 25% increase for the collector current, and a 21% and 12% increase for the transit frequencies fT and fMAX respectively.

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Source Proceedings of 27th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013
Author Canderle, Elodie, Chevalier, P., Avenier, G., Derrier, N., Céli, D., Gaquière, Christophe
Maintainer CCSD
Last Updated May 5, 2026, 10:18 (UTC)
Created May 5, 2026, 10:18 (UTC)
Identifier hal-00996056
Language en
contributor Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
coverage Bordeaux, France
creator Canderle, Elodie
date 2013-05-05T00:00:00
harvest_object_id 61b6b15a-ca82-4be4-8514-1c04080a0bc2
harvest_source_id 3374d638-d20b-4672-ba96-a23232d55657
harvest_source_title test moissonnage SELUNE
metadata_modified 2024-01-24T00:00:00
relation info:eu-repo/semantics/altIdentifier/doi/10.1109/BCTM.2013.6798181
set_spec type:COMM